View AO4728L_4589790.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AO4728L N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
SRFETTM AO4728L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion.
Features
VDS (V) = 30V ID = 20A RDS(ON) < 4.3m RDS(ON) < 6m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
SOIC-8 D
D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
G S Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
G S
Maximum 30 20 20 17 146 40 80 3.1 2 -55 to 150
Units V V A A mJ W C
TC=25C TC=70C
ID IDM IAR EAR PD TJ, TSTG
Repetitive avalanche energy L=0.1mH Power Dissipation
B
TC=25C TC=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
A AD
t 10s Steady-State Steady-State
RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 2975 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 485 204 0.28 48 VGS=10V, VDS=15V, ID=20A 20 12 6 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s
2
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
0.1 20 0.1 1.2 146 3.6 TJ=125C 5.5 4.8 87 0.4 0.7 6 3719 693 340 0.56 60 25 15 10 9.2 10.7 40 12.5 10 21 13 26.5 16 32 4463 900 476 0.84 72 30 18 14 4.3 6.6 6 1.8 2.2
mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value A in any given application depends on the user's specific board design. B. The power dissipation P is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. D C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max. s 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev0: Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160 10V 140 120 4V 100 ID (A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 7 6 RDS(ON) (m) 5 4 3 2 1 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VGS=3V 5V 4.5V 3.5V ID(A) 10V 100 80 60 40 125C 20 25C 120 VDS=5V
VGS=10V ID=20A
17 5 2 10 VGS=4.5V
ID=18A
11 ID=20A 9 RDS(ON) (m)
1.0E+02
1.0E+01 IS (A)
125C
7
125C
1.0E+00 25C 1.0E-01
5 25C
3
1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A Capacitance (pF) 6000 5000 4000 3000 2000 1000 0 0 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 60 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
8
VGS (Volts)
6
4
2
0
200 IAR (A) Peak Avalanche Current 180 160 140 ID (Amps) 120 100 80 60 40 20 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) TA=150C TA=125C TA=25C
1000.0 100.0 10.0 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10 100
RDS(ON) limited
10s 100s 1ms TJ(Max)=150C TC=25C 10ms 100ms 10s DC
TA=100C
1000
TA=25C
100
Power (W)
10
1 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 0.7 0.6 VDS=30V IR (A) 1.0E-03 VDS=15V VSD (V) 0.5 0.4 0.3 1.0E-05 0.2 0.1 0 100 150 200 Temperature (C) Figure 13: Diode Reverse Leakage Current vs. Junction Temperature 14 di/dt=800A/s 125C 34 Qrr (nC) 32 30 28 26 0 5 10 15 20 25 30 IS (A) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25C Irm (A) 8 Qrr Irm 25C 125C 6 4 2 0 12 10 16 14 12 trr (ns) 10 8 6 4 2 0 0 5 10 15 20 25 30 IS (A) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current S 25C 0.5 0 125C di/dt=800A/s 125C trr 25C 2.5 2 1.5 1 50 0 100 150 200 Temperature (C) Figure 14: Diode Forward voltage vs. Junction Temperature 3 50 IS=1A 20A 10A
1.0E-02
1.0E-04
5A
1.0E-06
38 36
35 30 25 Qrr (nC) 20 15 10 5 Irm 0 0 200 400 600 800 Qrr 125C 25C Is=20A 125C
10 8 25C Irm (A) 6 4 2 0 1000
24 Is=20A 20 16 trr (ns) 12 125 8 4 0 0 200 400 600 800 25C S 125C trr 25C
2.5 2 1.5 1 0.5 0 1000 S
di/dt (A/s) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
AO4728L
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

▲Up To Search▲

Price & Availability of AO4728L

	To Download AO4728L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .